CONTA-CLIP

SMS relæ GSM PRO2 med moduler for digital/Analog input/output

Mulighed for GPS overvågning/rapportering
Mulighed for ekstern antenne
Konfigureres via PC eller App

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Artikler	2G	3G	4G	Antenna GPS	Antenna GSM	Bredde	Bus protocoll / interface	Contact configuration	Contact material	Continuous current max / Inrush current max	Control pulse length min	Counter input (pull-down)	Current consumption	Electrical life in hours (AC1)	Electromagnetic Compatibility	Extension module	Forsyningsspænding	Frequency GPS	Frequency spectrum	Godkendelser	Højde	Input	Input frequency max	Input resistance RTD	Input resistance U / I	Input signal U / I max	Længde	LED status	Load resistance U	Logic "0"	Mechanical life hours	Minimum pulse duration	Module current (all relays) max	Number of ext. modules max	Number of inputs	Number of outputs	Rated V ac / switching V ac max	Relative humidity max	Relay contact	Resolution I (0-20 mA)	Resolution RTD	Resolution U (0-10 V dc)	SIM card	Switching capacity max	Switching current max	Temperaturkoefficient	Threshold digital inputs	Time to first fix (@ -140dBm)	Udgang	Vægt	Voltage active antenna
16454.2	Quad-band GSM bands: 850, 900, 1800 and 1900 MHz	Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz	LTE CAT1: Penta band 700 (Bd28)/ 800 (Bd20)/900 (Bd8)/1800 (Bd3)/2100 MHz (Bd1)		50 Ohm, SMA-plug	36 mm	Modbus RTU / RS485, half-duplex, non-insulated		AgNi 90/10	5 / 5 A		1000 pulses/s max. Pulldown res. 24 kOhm	275 mA @ 24V dc	1,5x10⁵	EN55011, EN61326-1		10-30V dc		ETSI EN 301-511 V9.0.2		77 mm				80K / 500Ω	30 V / -	88 mm				15x10⁶	500 ms		15 pc	2	1	250 / 250 V ac	80 %	1 CO	40 µA / ± (40 µ + 0,3%)		20mV / ±(20mV+0,3%)	Nano-SIM	1200 VA			Low <3, High >6V			149 g
16455.2	Quad-band GSM bands: 850, 900, 1800 and 1900 MHz	Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz	LTE CAT1: Penta band 700 (Bd28)/ 800 (Bd20)/900 (Bd8)/1800 (Bd3)/2100 MHz (Bd1)		50 Ohm, SMA-plug	95 mm	Modbus RTU / RS485, half-duplex, non-insulated		AgNi 90/10	5 / 5 A		1000 pulses/s max. Pulldown res. 24 kOhm	275 mA @ 24V dc	1,5x10⁵	EN55011, EN61326-1		10-30V dc		ETSI EN 301-511 V9.0.2		77 mm				80K / 500Ω	30 V / -	88 mm				15x10⁶	500 ms		15 pc	10	4	250 / 250 V ac	80 %	1 CO	40 µA / ± (40 µ + 0,3%)		20mV / ±(20mV+0,3%)	Nano-SIM	1200 VA			Low <3, High >6V			262 g
16368.2 GSM-PRO2 GSM-PRO BASE MODULE	Quad-band GSM bands: 850, 900, 1800 and 1900 MHz	Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz			50 Ohm, SMA-plug	36 mm	Modbus RTU / RS485, half-duplex, non-insulated		AgNi 90/10	5 / 5 A		1000 pulses/s max. Pulldown res. 24 kOhm	275 mA @ 24V dc	1,5x10⁵	EN55011, EN61326-1		10-30V dc		ETSI EN 301-511 V9.0.2		77 mm				80K / 500Ω	30 V / -	88 mm				15x10⁶	500 ms		15 pc	2	1	250 / 250 V ac	80 %	1 CO	40 µA / ± (40 µ + 0,3%)		20mV / ±(20mV+0,3%)	Nano-SIM	1200 VA			Low <3, High >6V			135 g
16407.2 GSM-PRO2E Base, 10 input	Quad-band GSM bands: 850, 900, 1800 and 1900 MHz	Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz			50 Ohm, SMA-plug	95 mm	Modbus RTU / RS485, half-duplex, non-insulated		AgNi 90/10	5 / 5 A		1000 pulses/s max. Pulldown res. 24 kOhm	275 mA @ 24V dc	1,5x10⁵	EN55011, EN61326-1		10-30V dc		ETSI EN 301-511 V9.0.2		77 mm				80K / 500Ω	30 V / -	88 mm				15x10⁶	500 ms		15 pc	10	4	250 / 250 V ac	80 %	1 CO	40 µA / ± (40 µ + 0,3%)		20mV / ±(20mV+0,3%)	Nano-SIM	1200 VA			Low <3, High >6V			230 g
16369.2 GSM-PRO2-GPS GSM-PRO BASE MODULE INC GPS	Quad-band GSM bands: 850, 900, 1800 and 1900 MHz	Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz		50 Ohm, SMA-plug	50 Ohm, SMA-plug	36 mm	Modbus RTU / RS485, half-duplex, non-insulated		AgNi 90/10	5 / 5 A		1000 pulses/s max. Pulldown res. 24 kOhm	275 mA @ 24V dc	1,5x10⁵	EN55011, EN61326-1		10-30V dc	1575-1587 Mhz	ETSI EN 301-511 V9.0.2		77 mm				80K / 500Ω	30 V / -	88 mm				15x10⁶	500 ms		15 pc	2	1	250 / 250 V ac	80 %	1 CO	40 µA / ± (40 µ + 0,3%)		20mV / ±(20mV+0,3%)	Nano-SIM	1200 VA			Low <3, High >6V	Hot<2s, warm<35s, cold<46s		137 g	3 V @ RF plug
16408.2 GSM-PRO2E-GPS Base m. GPS, 10 input	Quad-band GSM bands: 850, 900, 1800 and 1900 MHz	Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz		50 Ohm, SMA-plug	50 Ohm, SMA-plug	95 mm	Modbus RTU / RS485, half-duplex, non-insulated		AgNi 90/10	5 / 5 A		1000 pulses/s max. Pulldown res. 24 kOhm	275 mA @ 24V dc	1,5x10⁵	EN55011, EN61326-1		10-30V dc	1575-1587 Mhz	ETSI EN 301-511 V9.0.2		77 mm				80K / 500Ω	30 V / -	88 mm				15x10⁶	500 ms		15 pc	10	4	250 / 250 V ac	80 %	1 CO	40 µA / ± (40 µ + 0,3%)		20mV / ±(20mV+0,3%)	Nano-SIM	1200 VA			Low <3, High >6V	Hot<2s, warm<35s, cold<46s		232 g	3 V @ RF plug
16456.2	Quad-band GSM bands: 850, 900, 1800 and 1900 MHz	Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz	LTE CAT1: Quad band, 700 (Bd12)/ 850 (Bd5)/AWS (Bd4)/1900 MHz (Bd2)		50 Ohm, SMA-plug	36 mm	Modbus RTU / RS485, half-duplex, non-insulated		AgNi 90/10	5 / 5 A		1000 pulses/s max. Pulldown res. 24 kOhm	275 mA @ 24V dc	1,5x10⁵	EN55011, EN61326-1		10-30V dc		ETSI EN 301-511 V9.0.2		77 mm				80K / 500Ω	30 V / -	88 mm				15x10⁶	500 ms		15 pc	2	1	250 / 250 V ac	80 %	1 CO	40 µA / ± (40 µ + 0,3%)		20mV / ±(20mV+0,3%)	Nano-SIM	1200 VA			Low <3, High >6V			149 g
16457.2	Quad-band GSM bands: 850, 900, 1800 and 1900 MHz	Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz	LTE CAT1: Quad band, 700 (Bd12)/ 850 (Bd5)/AWS (Bd4)/1900 MHz (Bd2)		50 Ohm, SMA-plug	95 mm	Modbus RTU / RS485, half-duplex, non-insulated		AgNi 90/10	5 / 5 A		1000 pulses/s max. Pulldown res. 24 kOhm	275 mA @ 24V dc	1,5x10⁵	EN55011, EN61326-1		10-30V dc		ETSI EN 301-511 V9.0.2		77 mm				80K / 500Ω	30 V / -	88 mm				15x10⁶	500 ms		15 pc	10	4	250 / 250 V ac	80 %	1 CO	40 µA / ± (40 µ + 0,3%)		20mV / ±(20mV+0,3%)	Nano-SIM	1200 VA			Low <3, High >6V			262 g
16375.2 GSM-PRO-10DI DIGITAL INPUT EXT MOD 10CH						95 mm	Modbus RTU / RS485, half-duplex				15 ms		30 mA			Ja	20-28V dc			CE	60 mm	Digital	20 Hz		58K	30V dc / -	53 mm	Ja		<3 V					10			90 %												154 g
16377.2 GSM-PRO-8AI ANALOGUE INPUT EXT MOD 8CH						95 mm	Modbus RTU / RS485, half-duplex						50 mA			Ja	20-28V dc			CE	60 mm	Analog		Plug-in, default 5k11 for Ni/PT1000 RTD sensors	200K / 250Ω	10V dc / 20 mA	53 mm								8			90 %		10 bit / ± (20 µA + 0,4% of measured value)	14 bit / ± (0,4 °C + 0,5% of measured value)	10bit / ± (10mV + 0,3% of measured value)				<0,02% / K				128 g
16378.2 GSM-PRO-4DO DIGITAL OUTPUT EXT MOD 4CH						95 mm	Modbus RTU / RS485, half-duplex	1 CO	AgSnO2				100 mA	1x10⁵		Ja	20-28V dc			CE	60 mm						53 mm	Ja			30x10⁵		32 A			4	250 / 250 V ac	90 %						4000 VA	16 / 80 (20 ms)				Digital	172 g
16376.2 GSM-PRO-4AO ANALOGUE OUTPUT EXT MOD 4CH						95 mm	Modbus RTU / RS485, half-duplex						57 mA			Ja	20-28V dc			CE	60 mm						36 mm	Nej	>1000 Ω							4		90 %				10bit / ± (30mV + 0,5% of measured value)				<0,02% / K			Analog	66 g

Variant

16454.2

Specifikationer

2G	Quad-band GSM bands: 850, 900, 1800 and 1900 MHz
3G	Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz
4G	LTE CAT1: Penta band 700 (Bd28)/ 800 (Bd20)/900 (Bd8)/1800 (Bd3)/2100 MHz (Bd1)
Afisoleringslængde	6 mm
Antenna GSM	50 Ohm, SMA-plug
Bredde	36 mm
Bus protocoll / interface	Modbus RTU / RS485, half-duplex, non-insulated
Connection type	Skrue
Contact material	AgNi 90/10
Continuous current max / Inrush current max	5 / 5 A
Counter input (pull-down)	1000 pulses/s max. Pulldown res. 24 kOhm
Current consumption	275 mA @ 24V dc
DIN-VDE Spec	LVD 2014/35/EC, EN 50178. EMC 2014/30/EC, EN 61326-1
Electrical life in hours (AC1)	1,5x10⁵
Electromagnetic Compatibility	EN55011, EN61326-1
Forsyningsspænding	10-30V dc
Frequency spectrum	ETSI EN 301-511 V9.0.2
Højde	77 mm
Input resistance U / I	80K / 500Ω
Input signal U / I max	30 V / -
IP-klasse	IP20
Længde	88 mm
Mechanical life hours	15x10⁶
Minimum pulse duration	500 ms
Montage	TS 35/7,5 og direkte montering
Number of ext. modules max	15 pc
Number of inputs	2
Number of outputs	1
Oprindelsesland	NL
Pakningsstørrelse	1 pc
Rated V ac / switching V ac max	250 / 250 V ac
Relative humidity max	80 %
Relay contact	1 CO
Resolution I (0-20 mA)	40 µA / ± (40 µ + 0,3%)
Resolution U (0-10 V dc)	20mV / ±(20mV+0,3%)
SIM card	Nano-SIM
Switching capacity max	1200 VA
Tariff code	85176990
Temperaturområde drift fra	-20 °C
Temperaturområde drift til	60 °C
Threshold digital inputs	Low <3, High >6V
Torque	0,4 Nm
Tværsnit enkelt ledning fra	0,2 mm²
Tværsnit enkelt ledning til	4 mm²
Vægt	149 g