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CONTA-CLIP

CONTA-CLIP

SMS relæ GSM PRO2 med moduler for digital/Analog input/output

  • Mulighed for GPS overvågning/rapportering
  • Mulighed for ekstern antenne
  • Konfigureres via PC eller App

Varianter

Favoritter Artikler Pris 2G 3G 4G Antenna GPS Antenna GSM Bredde Bus protocoll / interface Contact configuration Contact material Continuous current max / Inrush current max Control pulse length min Counter input (pull-down) Current consumption Electrical life in hours (AC1) Electromagnetic Compatibility Extension module Forsyningsspænding Frequency GPS Frequency spectrum Godkendelser Højde Input Input frequency max Input resistance RTD Input resistance U / I Input signal U / I max Længde LED status Load resistance U Logic "0" Mechanical life hours Minimum pulse duration Module current (all relays) max Number of ext. modules max Number of inputs Number of outputs Rated V ac / switching V ac max Relative humidity max Relay contact Resolution I (0-20 mA) Resolution RTD Resolution U (0-10 V dc) SIM card Switching capacity max Switching current max Temperaturkoefficient Threshold digital inputs Time to first fix (@ -140dBm) Udgang Vægt Voltage active antenna
16454.2
Quad-band GSM bands: 850, 900, 1800 and 1900 MHz Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz LTE CAT1: Penta band 700 (Bd28)/ 800 (Bd20)/900 (Bd8)/1800 (Bd3)/2100 MHz (Bd1) 50 Ohm, SMA-plug 36 mm Modbus RTU / RS485, half-duplex, non-insulated AgNi 90/10 5 / 5 A 1000 pulses/s max. Pulldown res. 24 kOhm 275 mA @ 24V dc 1,5x10⁵ EN55011, EN61326-1 10-30V dc ETSI EN 301-511 V9.0.2 77 mm 80K / 500Ω 30 V / - 88 mm 15x10⁶ 500 ms 15 pc 2 1 250 / 250 V ac 80 % 1 CO 40 µA / ± (40 µ + 0,3%) 20mV / ±(20mV+0,3%) Nano-SIM 1200 VA Low <3, High >6V 149 g
16455.2
Quad-band GSM bands: 850, 900, 1800 and 1900 MHz Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz LTE CAT1: Penta band 700 (Bd28)/ 800 (Bd20)/900 (Bd8)/1800 (Bd3)/2100 MHz (Bd1) 50 Ohm, SMA-plug 95 mm Modbus RTU / RS485, half-duplex, non-insulated AgNi 90/10 5 / 5 A 1000 pulses/s max. Pulldown res. 24 kOhm 275 mA @ 24V dc 1,5x10⁵ EN55011, EN61326-1 10-30V dc ETSI EN 301-511 V9.0.2 77 mm 80K / 500Ω 30 V / - 88 mm 15x10⁶ 500 ms 15 pc 10 4 250 / 250 V ac 80 % 1 CO 40 µA / ± (40 µ + 0,3%) 20mV / ±(20mV+0,3%) Nano-SIM 1200 VA Low <3, High >6V 262 g
GSM-PRO2 GSM-PRO BASE MODULE
16368.2 GSM-PRO2 GSM-PRO BASE MODULE
Quad-band GSM bands: 850, 900, 1800 and 1900 MHz Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz 50 Ohm, SMA-plug 36 mm Modbus RTU / RS485, half-duplex, non-insulated AgNi 90/10 5 / 5 A 1000 pulses/s max. Pulldown res. 24 kOhm 275 mA @ 24V dc 1,5x10⁵ EN55011, EN61326-1 10-30V dc ETSI EN 301-511 V9.0.2 77 mm 80K / 500Ω 30 V / - 88 mm 15x10⁶ 500 ms 15 pc 2 1 250 / 250 V ac 80 % 1 CO 40 µA / ± (40 µ + 0,3%) 20mV / ±(20mV+0,3%) Nano-SIM 1200 VA Low <3, High >6V 135 g
GSM-PRO2E Base, 10 input
16407.2 GSM-PRO2E Base, 10 input
Quad-band GSM bands: 850, 900, 1800 and 1900 MHz Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz 50 Ohm, SMA-plug 95 mm Modbus RTU / RS485, half-duplex, non-insulated AgNi 90/10 5 / 5 A 1000 pulses/s max. Pulldown res. 24 kOhm 275 mA @ 24V dc 1,5x10⁵ EN55011, EN61326-1 10-30V dc ETSI EN 301-511 V9.0.2 77 mm 80K / 500Ω 30 V / - 88 mm 15x10⁶ 500 ms 15 pc 10 4 250 / 250 V ac 80 % 1 CO 40 µA / ± (40 µ + 0,3%) 20mV / ±(20mV+0,3%) Nano-SIM 1200 VA Low <3, High >6V 230 g
GSM-PRO2-GPS GSM-PRO BASE MODULE INC GPS
16369.2 GSM-PRO2-GPS GSM-PRO BASE MODULE INC GPS
Quad-band GSM bands: 850, 900, 1800 and 1900 MHz Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz 50 Ohm, SMA-plug 50 Ohm, SMA-plug 36 mm Modbus RTU / RS485, half-duplex, non-insulated AgNi 90/10 5 / 5 A 1000 pulses/s max. Pulldown res. 24 kOhm 275 mA @ 24V dc 1,5x10⁵ EN55011, EN61326-1 10-30V dc 1575-1587 Mhz ETSI EN 301-511 V9.0.2 77 mm 80K / 500Ω 30 V / - 88 mm 15x10⁶ 500 ms 15 pc 2 1 250 / 250 V ac 80 % 1 CO 40 µA / ± (40 µ + 0,3%) 20mV / ±(20mV+0,3%) Nano-SIM 1200 VA Low <3, High >6V Hot<2s, warm<35s, cold<46s 137 g 3 V @ RF plug
GSM-PRO2E-GPS Base m. GPS, 10 input
16408.2 GSM-PRO2E-GPS Base m. GPS, 10 input
Quad-band GSM bands: 850, 900, 1800 and 1900 MHz Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz 50 Ohm, SMA-plug 50 Ohm, SMA-plug 95 mm Modbus RTU / RS485, half-duplex, non-insulated AgNi 90/10 5 / 5 A 1000 pulses/s max. Pulldown res. 24 kOhm 275 mA @ 24V dc 1,5x10⁵ EN55011, EN61326-1 10-30V dc 1575-1587 Mhz ETSI EN 301-511 V9.0.2 77 mm 80K / 500Ω 30 V / - 88 mm 15x10⁶ 500 ms 15 pc 10 4 250 / 250 V ac 80 % 1 CO 40 µA / ± (40 µ + 0,3%) 20mV / ±(20mV+0,3%) Nano-SIM 1200 VA Low <3, High >6V Hot<2s, warm<35s, cold<46s 232 g 3 V @ RF plug
16456.2
Quad-band GSM bands: 850, 900, 1800 and 1900 MHz Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz LTE CAT1: Quad band, 700 (Bd12)/ 850 (Bd5)/AWS (Bd4)/1900 MHz (Bd2) 50 Ohm, SMA-plug 36 mm Modbus RTU / RS485, half-duplex, non-insulated AgNi 90/10 5 / 5 A 1000 pulses/s max. Pulldown res. 24 kOhm 275 mA @ 24V dc 1,5x10⁵ EN55011, EN61326-1 10-30V dc ETSI EN 301-511 V9.0.2 77 mm 80K / 500Ω 30 V / - 88 mm 15x10⁶ 500 ms 15 pc 2 1 250 / 250 V ac 80 % 1 CO 40 µA / ± (40 µ + 0,3%) 20mV / ±(20mV+0,3%) Nano-SIM 1200 VA Low <3, High >6V 149 g
16457.2
Quad-band GSM bands: 850, 900, 1800 and 1900 MHz Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz LTE CAT1: Quad band, 700 (Bd12)/ 850 (Bd5)/AWS (Bd4)/1900 MHz (Bd2) 50 Ohm, SMA-plug 95 mm Modbus RTU / RS485, half-duplex, non-insulated AgNi 90/10 5 / 5 A 1000 pulses/s max. Pulldown res. 24 kOhm 275 mA @ 24V dc 1,5x10⁵ EN55011, EN61326-1 10-30V dc ETSI EN 301-511 V9.0.2 77 mm 80K / 500Ω 30 V / - 88 mm 15x10⁶ 500 ms 15 pc 10 4 250 / 250 V ac 80 % 1 CO 40 µA / ± (40 µ + 0,3%) 20mV / ±(20mV+0,3%) Nano-SIM 1200 VA Low <3, High >6V 262 g
GSM-PRO-10DI DIGITAL INPUT EXT MOD 10CH
16375.2 GSM-PRO-10DI DIGITAL INPUT EXT MOD 10CH
95 mm Modbus RTU / RS485, half-duplex 15 ms 30 mA Ja 20-28V dc CE 60 mm Digital 20 Hz 58K 30V dc / - 53 mm Ja <3 V 10 90 % 154 g
GSM-PRO-8AI ANALOGUE INPUT EXT MOD 8CH
16377.2 GSM-PRO-8AI ANALOGUE INPUT EXT MOD 8CH
95 mm Modbus RTU / RS485, half-duplex 50 mA Ja 20-28V dc CE 60 mm Analog Plug-in, default 5k11 for Ni/PT1000 RTD sensors 200K / 250Ω 10V dc / 20 mA 53 mm 8 90 % 10 bit / ± (20 µA + 0,4% of measured value) 14 bit / ± (0,4 °C + 0,5% of measured value) 10bit / ± (10mV + 0,3% of measured value) <0,02% / K 128 g
GSM-PRO-4DO DIGITAL OUTPUT EXT MOD 4CH
16378.2 GSM-PRO-4DO DIGITAL OUTPUT EXT MOD 4CH
95 mm Modbus RTU / RS485, half-duplex 1 CO AgSnO2 100 mA 1x10⁵ Ja 20-28V dc CE 60 mm 53 mm Ja 30x10⁵ 32 A 4 250 / 250 V ac 90 % 4000 VA 16 / 80 (20 ms) Digital 172 g
GSM-PRO-4AO ANALOGUE OUTPUT EXT MOD 4CH
16376.2 GSM-PRO-4AO ANALOGUE OUTPUT EXT MOD 4CH
95 mm Modbus RTU / RS485, half-duplex 57 mA Ja 20-28V dc CE 60 mm 36 mm Nej >1000 Ω 4 90 % 10bit / ± (30mV + 0,5% of measured value) <0,02% / K Analog 66 g

Variant

16454.2

Specifikationer

2G Quad-band GSM bands: 850, 900, 1800 and 1900 MHz
3G Five-band UMTS (WCDMA/FDD) bands: 800, 850, 900, 1800, 1900 and 2100 MHz
4G LTE CAT1: Penta band 700 (Bd28)/ 800 (Bd20)/900 (Bd8)/1800 (Bd3)/2100 MHz (Bd1)
Afisoleringslængde 6 mm
Antenna GSM 50 Ohm, SMA-plug
Bredde 36 mm
Bus protocoll / interface Modbus RTU / RS485, half-duplex, non-insulated
Connection type Skrue
Contact material AgNi 90/10
Continuous current max / Inrush current max 5 / 5 A
Counter input (pull-down) 1000 pulses/s max. Pulldown res. 24 kOhm
Current consumption 275 mA @ 24V dc
DIN-VDE Spec LVD 2014/35/EC, EN 50178. EMC 2014/30/EC, EN 61326-1
Electrical life in hours (AC1) 1,5x10⁵
Electromagnetic Compatibility EN55011, EN61326-1
Forsyningsspænding 10-30V dc
Frequency spectrum ETSI EN 301-511 V9.0.2
Højde 77 mm
Input resistance U / I 80K / 500Ω
Input signal U / I max 30 V / -
IP-klasse IP20
Længde 88 mm
Mechanical life hours 15x10⁶
Minimum pulse duration 500 ms
Montage TS 35/7,5 og direkte montering
Number of ext. modules max 15 pc
Number of inputs 2
Number of outputs 1
Oprindelsesland NL
Pakningsstørrelse 1 pc
Rated V ac / switching V ac max 250 / 250 V ac
Relative humidity max 80 %
Relay contact 1 CO
Resolution I (0-20 mA) 40 µA / ± (40 µ + 0,3%)
Resolution U (0-10 V dc) 20mV / ±(20mV+0,3%)
SIM card Nano-SIM
Switching capacity max 1200 VA
Tariff code 85176990
Temperaturområde drift fra -20 °C
Temperaturområde drift til 60 °C
Threshold digital inputs Low <3, High >6V
Torque 0,4 Nm
Tværsnit enkelt ledning fra 0,2 mm²
Tværsnit enkelt ledning til 4 mm²
Vægt 149 g

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Lars Bogetoft ChristensenLars Bogetoft Christensen

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48 10 64 97

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